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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Extended Mode Register
(TCSR) bits has no effect on the device. The self refresh oscillator will continue refresh
at the optimal factory-programmed rate for the device temperature.
Partial-Array Self Refresh
For further power savings during self refresh, the partial-array self refresh (PASR) feature
enables the controller to select the amount of memory to be refreshed during self re-
fresh. The refresh options are:
?
?
?
?
?
Full array: banks 0, 1, 2, and 3
One-half array: banks 0 and 1
One-quarter array: bank 0
One-eighth array: bank 0 with row address most significant bit (MSB) = 0
One-sixteenth array: bank 0 with row address MSB = 0 and row address MSB - 1 = 0
READ and WRITE commands can still be issued to any bank selected during standard
operation, but only the selected banks or segments of a bank in PASR are refreshed dur-
ing self refresh. It is important to note that data in unused banks or portions of banks is
lost when PASR is used.
Output Drive Strength
Because the device is designed for use in smaller systems that are typically point-to-
point connections, an option to control the drive strength of the output buffers is provi-
ded. Drive strength should be selected based on the expected loading of the memory
bus. There are four supported settings for the output drivers: 25 Ω , 37 Ω , 55 Ω , and 80 Ω
internal impedance. These are full, three-quarter, one-half, and one-quarter drive
strengths, respectively.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
45
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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